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论文题目 英文论文题目 作者 刊物名称 年卷期页
Research on Optical Transmitter and Receiver Module Used for High Speed Interconnection between CPU and Memory Research on Optical Transmitter and Receiver Module Used for High Speed Interconnection between CPU and Memory fiber and integrated optics 2016 (5):212
Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory 刘森 Advanced Materials 2016 (0):1
A double-end-beam based infrared device fabricated using CMOS-MEMS process A double-end-beam based infrared device fabricated using CMOS-MEMS process Sensor Review 2016 36(3):240
Temperature-dependent optical response of phase-only nematic liquid crystal on silicon devices Temperature-dependent optical response of phase-only nematic liquid crystal on silicon devices 张紫辰 Chinese Optics Letter 2016 14(11):111601-1
Highly improved resistive switching performances of the self-doped Pt-HfO2Cu-Cu devices by atomic layer deposition Highly improved resistive switching performances of the self-doped Pt-HfO2Cu-Cu devices by atomic layer deposition 刘森 Science China Physics, Mechanics & Astronomy 2016 (59):127311-1
Device physics towards high performance GaN-based power electronics Device physics towards high performance GaN-based power electronics 黄森 SCIENTIA SINICA Physica, Mechanica & Astronomica 2016 46(10):107307
Fabrication and characterization of SiO2-Si heterogeneous nanopillar arrays Fabrication and characterization of SiO2-Si heterogeneous nanopillar arrays 毛海央 Nanotechnology 2016 (27):305301-1
Exploring probabilistic follow relationship to prevent collusive peer-to-peer piracy Exploring probabilistic follow relationship to prevent collusive peer-to-peer piracy Knowledge and Information Systems 2016 48(1):111
A CMOS MEMS IR device based on double-layer thermocouples A CMOS MEMS IR device based on double-layer thermocouples Microsystem Technologies 2016 (22):1163
Normally-Off GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiNx Passivation and High-Temperature Gate Recess Normally-Off GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiNx Passivation and High-Temperature Gate Recess IEEE Transactions on Electron Devices 2016 63(2):614
Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure Semiconductor Science and Technology 2016 31(6):065014-1
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs Journal of Vacuum Science & Technology B 2016 34(4):041202-1
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure 黄森 IEEE Electron Device Letters 2016 37(12):1617
Application of PGD on Parametric Modeling of a Piezoelectric Energy Harvester Application of PGD on Parametric Modeling of a Piezoelectric Energy Harvester IEEE Transactions on Magnetics 2016 52(11):1
3-D IC Interconnect Capacitance Extraction Using Dual Discrete Geometric Methods With Prism Elements 3-D IC Interconnect Capacitance Extraction Using Dual Discrete Geometric Methods With Prism Elements IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2016 24(4):1524
60 GHz Indoor Propagation With Time-Domain Geometric-Optics 60 GHz Indoor Propagation With Time-Domain Geometric-Optics IEEE Transactions on Magnetics 2016 52(3):7208804
Numerical Analysis of Discrete Geometric Method on Plasmonic Structures Numerical Analysis of Discrete Geometric Method on Plasmonic Structures IEEE Transactions on Magnetics 2016 52(3):7206304
Computation of sensitivities of IC interconnect parasitic capacitances to the process variation with dual discrete geometric methods Computation of sensitivities of IC interconnect parasitic capacitances to the process variation with dual discrete geometric methods 高展 Journal of Semiconductors 2016 37(8):085003-1
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