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论文题目 英文论文题目 作者 刊物名称 年卷期页
Coordination number modification at Al2O3/InP interfaces using sulfur and nitride passivations Coordination number modification at Al2O3/InP interfaces using sulfur and nitride passivations 王盛凯 Electronics Letters 2016 (1):1
Positive bias temperature instability degradation of buried InGaAsChannel n-MOSFETs with InGaP barrier layer and Al2O3 dielectric Positive bias temperature instability degradation of buried InGaAsChannel n-MOSFETs with InGaP barrier layer and Al2O3 dielectric 王盛凯 IEEE Transactions on Magnetics 2016 (1):1
Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films J. Phys. Chem. Solids 2016 (99):148
全反射式宽光谱成像椭偏仪 全反射式宽光谱成像椭偏仪 光电工程 2016 43(1):55
Remote interfacial dipole scattering on electron mobility degradation in Ge field-effect-transistor with GeOx/Al2O3 gate dielectrics Remote interfacial dipole scattering on electron mobility degradation in Ge field-effect-transistor with GeOx/Al2O3 gate dielectrics 王晓磊 J.Phys. D 2016 (49):1
InP表面氮化对Al2O3/InP金属氧化物半导体电容界面特性及漏电特性的影响 InP表面氮化对Al2O3/InP金属氧化物半导体电容界面特性及漏电特性的影响 曹明民 真空科学与技术学报 2016 (1):110
The effect of nitridation and sulfur passivation for In (0.53)Ga (0.47)As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties The effect of nitridation and sulfur passivation for In (0.53)Ga (0.47)As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties 林子曾 半导体学报 2016 (2):1
卫星导航系统中的LDPC译码器设计 卫星导航系统中的LDPC译码器设计 巴晓辉 第五届中国卫星导航定位协会专家论坛 2016 1(1):250
一种基于点压技术的新型晶圆键合方法 一种基于点压技术的新型晶圆键合方法 许维 焊接学报 2016 (9):1
GPS/BDS卫星导航信号数字中频数据生成方法 GPS/BDS卫星导航信号数字中频数据生成方法 巴晓辉 第七届中国卫星导航学术年会 2016 (1):1
An Asynchronous Wafer Bonding Method Using An Asynchronous Wafer Bonding Method Using 许维 IEEE 2016 (1):1
100-nm gate-length enhancement mode InGaAs MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide 100-nm gate-length enhancement mode InGaAs MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide 常虎东 IEEE 2016 (1):1
Ultralow temperature epitaxial growth of silicon-germanium thin films on Si(001) using GeF4 Ultralow temperature epitaxial growth of silicon-germanium thin films on Si(001) using GeF4 陶科 Diamond and Related Materials 2016 68(1):138
Simulation study of an imulation study of an enhancement -mode n-type InGaAs MOSFETs with a low zero bias off-current Simulation study of an imulation study of an enhancement -mode n-type InGaAs MOSFETs with a low zero bias off-current IEEE 2016 (1):1
00-nm Gate-Length GaAs mHEMTs using Si-doped InP/InAlAs schottky layers and atomic layer deposition Al2O3 Passivation with fmax of 388.2 GHz 00-nm Gate-Length GaAs mHEMTs using Si-doped InP/InAlAs schottky layers and atomic layer deposition Al2O3 Passivation with fmax of 388.2 GHz IEEE 2016 (1):1
A Low Jitter Supply Regulated Charge Pump PLL with Self-calibration A Low Jitter Supply Regulated Charge Pump PLL with Self-calibration 陈敏 Journal of Semiconductors 2016 37(1):015006-1
Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells 李强 Solar Energy 2016 135(1):487
A CMOS detection chip for amperometric sensors with chopper stabilized incremental delta-sigma ADC A CMOS detection chip for amperometric sensors with chopper stabilized incremental delta-sigma ADC 陈敏 Journal of Semiconductors 2016 37(6):065004-1
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