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论文题目 英文论文题目 作者 刊物名称 年卷期页
Study on Monolithically Integration Miniaturized Spectral Imager by Fabry-Perot with Bragg stack 第七届高性能特种光学薄膜技术及应用学术研讨会 2015 1(1):111-122
A Power Amplifier with Envelope Tracking used for Cellular Front-End Module based on 0.18um SOI CMOS process 萧延彬 IEEE MTT-S RFIT 2015 (10):73-76
基于中和电容的CMOS 60GHz差分低噪声放大器 王硕 微电子学 1949 (2):66-70
A Low Cost Readout and Processing Circuit for Integrated CMOS Geomagnetic Sensors ASICON2015 2015 (1):P1-13-P1-13
Analysis of capacitance-voltage-temperature characteristics of GaN High-Electron-Mobility Transistors CHIN. PHYS. LETT. 2015 32(4):048501-1-048501-3
0.18 um部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究 赵星 物理学报 2015 (12):1281-1283
Efficient source mask optimization method for reduction of computational lithography cycles and enhancement of process-window predictability 郭沫然 J. Micro/Nanolith. MEMS MOEMS 2015 14(4):1-10
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors 黄森 Applied Physics Letters 2015 106(3):033507-1-033507-5
In-situ phosphorous-doped SiGe layer on Si substrate by reactive thermal chemical vapor deposition at low temperature 陶科 Materials Science in Semiconductor Processing 2015 38(1):137-141
Low frequency noise measurements as a characterization tool for reliability assessment in AlGaN/GaN high-electron-mobilityTransistors (HEMTs) PEDs2015 1949 (1):1-3
Analytical surface-potential compact model for amorphous-IGZO thin-film transistors 宗旨威 Journal of Applied Physics 2015 (117):215705-1-215705-5
A novel method for in situ growing Ge-rich polycrystalline SiGe thin films on glass at low temperature 陶科 SCRIPTA MATERIALIA 2015 107(1):100-102
Thermal crosstalk in 3-dimensional RRAM crossbar array 孙鹏霄 Scientific Reports 2015 (5):1-9
Conduction Mechanism in SrTiO3-Based Field-Effect Transistors 朱正勇 IEEE T ELECTRON DEV 2015 62(7):2352-2355
The electrochemical transfer of CVD-graphene using agarose gel as solid electrolyte and mechanical support layer 张大勇 CHEM. COMMUN. 2015 (51):2987-2990
A novel method of identifying the carrier transport path in metal oxide resistive random access 卢年端 Journal of Physics D: Applied Physics 2015 (48):1-6
A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors 卢年端 Journal of Applied Physics 2015 (116):104502-1-104502-4
Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors 卢年端 Journal of Applied Physics 2015 (118):045701-1-045701-7
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