收藏本站  |  English  |  联系我们  |  中国科学院
  首页 所况介绍  
科研成果
 
 
 
 
现在位置:首页 > 科研成果 > 论文
论文题目: 第一作者: 论文编号:
发表年度: 论文出处:
 
论文题目 英文论文题目 作者 刊物名称 年卷期页
Electromagnetic susceptibility characterization of double SOI device Electromagnetic susceptibility characterization of double SOI device 李彬鸿 Microelectronics Reliability 2016 64(64):168
Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers 朱正勇 CHIN. PHYS. LETT. 2016 33(10):107804(1-4)
Synthesis of sub-millimeter Bi-/multi-layer graphene by designing a sandwiched structure using copper foils Synthesis of sub-millimeter Bi-/multi-layer graphene by designing a sandwiched structure using copper foils 贾昆鹏 Applied Physics Letter 2016 (109):123107-1
Bulk FinFETs with body spacers for improving fin height variation Bulk FinFETs with body spacers for improving fin height variation 魏星 Solid-State Electronics 2016 (122):45
Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors Thermal atomic layer deposition of TaAlC with TaCl5 and TMA as precursors 项金娟 ECS Journal of Solid State Science and Technology 2016 5(10):633
Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks 项金娟 ECS Journal of Solid State Science and Technology 2016 5(6):327
Microcontroller susceptibility variations to EFT burst during accelerated aging Microcontroller susceptibility variations to EFT burst during accelerated aging Microelectronics Reliability 2016 64(64):210
Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors 项金娟 ECS Journal of Solid State Science and Technology 2016 5(5):299
Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate 项金娟 Solid-State Electronics 2016 (122):64
Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate Improved Single-Event Hardness of Trench Power MOSFET with a Widened Split Gate 陆江 radiation effects on components & systems conference 2016 (2):12
Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors 项金娟 Chin. Phys. B 2016 25(3):37308
Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films 陈文辉 Thin Solid Films 2016 (613):32
Analysis of multi-e-beam lithography for cutting layers at 7-nm node Analysis of multi-e-beam lithography for cutting layers at 7-nm node 赵利俊 Journal of Micro/Nanolithography, MEMS, and MOEMS 2016 15(4):043501-1
A Novel Nanofabrication Technique of Silicon-Based Nanostructures A Novel Nanofabrication Technique of Silicon-Based Nanostructures 孟令款 Nanoscale Research Letters 2016 (11):504
Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devicesLingkuan Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devicesLingkuan 孟令款 Applied Surface Science 2016 (362):483
Novel top-down fabrication of Si-based nanostructures with sub-20nm scale Novel top-down fabrication of Si-based nanostructures with sub-20nm scale 孟令款 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology 2016 (1):1
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer 罗维春 Microelectronics Reliability 2016 (62):70
Spin diffusion in disordered organic semiconductors Spin diffusion in disordered organic semiconductors 李泠 Physical Review B 2016 (92):214438-1
共56页  首页上5页上一页678910下一页下5页尾页

 

    中国科学院微电子研究所版权所有 邮编:100029
单位地址:北京市朝阳区北土城西路3号,电子邮件:webadmin@ime.ac.cn
京公网安备110402500036号