收藏本站  |  English  |  联系我们  |  中国科学院
  首页 所况介绍  
科研成果
 
 
 
 
现在位置:首页 > 科研成果 > 论文
论文题目: 第一作者: 论文编号:
发表年度: 论文出处:
 
论文题目 英文论文题目 作者 刊物名称 年卷期页
基于虚拟平面的广角镜头全景拼接 科学技术与工程 2015 15(10):111-115
CMOS 电路中的单粒子瞬变效应综述 郝乐 电子元器件辐射效应国际会议(ICREED) 2015 (1):85-85
Effects of carbon pre-germanidation implantation on the thermal stability of NiGe and dopant segregation on both n- and p-type Ge substrate 刘庆波 ECS Journal of Solid State Science and Technology 2015 4(5):67-70
Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films 刘庆波 Microelectronic engineering 2015 133(1):6-10
Optimization of a two-step Ni(5% Pt) germanosilicidation process and the redistribution of Pt in Ni(Pt)Si1-xGex Germanosilicide 刘庆波 VACUUM 2015 111(1):114-118
Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods 郭奕栾 Journal of Semiconductors 2015 36(8):1-5
在SiGeC衬底上直接生长石墨烯 魏胜 半导体技术 2015 40(7):537-541
Towards single-trap spectroscopy_Generation-recombination noise in UTBOX SOI nMOSFETs 方雯 Phys. Status Solidi C 2015 3(3):292-298
Distinction between silicon and oxide traps using single-trap spectroscopy 方雯 Phys. Status Solidi A 2015 14(14):1-6
Low frequency noise characterization of GeOx passivated germanium MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES 2015 62(7):2078-2083
Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices 方雯 Solid state Phenomena 2015 242(242):449-458
Random Telegraph Noise: The key to single defect studies in nano-devices 方雯 Thin solid films 2015 43(5):1-4
Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition carbon 2015 (81):814-820
Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition Journal of Electronic Materials 2015 (44):79-86
A simulation analysis of performance of both implanted doping and in situ doping ETSOI PMOSFETs 冯帅 Journal of Semiconductors 2015 36(4):1-5
Effects of a carbon implant on thermal stability of Ni0:95(Pt0:05)Si 冯帅 Journal of Semiconductors 2015 36(6):4-4
Niu Pt1 - u Siv Ge1 - v /Si0. 72 Ge0. 28界面形貌的改善 杨鹏鹏 半导体制造技术 2015 40(1):49-52
Impact of the Silicon-nitride Passivation Film Thickness on the Characteristics of InAlAs/InGaAs InP-based HEMTs 钟英辉 Journal of the Korean Physical Society 2015 66(6):1020-1024
共56页  首页上5页上一页678910下一页下5页尾页

 

    中国科学院微电子研究所版权所有 邮编:100029
单位地址:北京市朝阳区北土城西路3号,电子邮件:webadmin@ime.ac.cn
京公网安备110402500036号